IRFL4310PBF hexfet ? power mosfet pd - 95144 s d g v dss = 100v r ds(on) = 0.20 ? i d = 1.6a 04/22/04 description surface mount dynamic dv/dt rating fast switching ease of paralleling advanced process technology ultra low on-resistance lead-free sot-223 * when mounted on fr-4 board using minimum recommended footprint. ** when mounted on 1 inch square copper board, for comparison with other smd devices. absolute maximum ratings www.irf.com 1 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick- and-place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of 1.0w is possible in a typical surface mount application. parameter typ. max. units r ja junction-to-amb. (pcb mount, steady state)* 93 120 r ja junction-to-amb. (pcb mount, steady state)** 48 60 thermal resistance c/w parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v** 2.2 i d @ t a = 25c continuous drain current, v gs @ 10v* 1.6 i d @ t a = 70c continuous drain current, v gs @ 10v* 1.3 i dm pulsed drain current 13 p d @t a = 25c power dissipation (pcb mount)** 2.1 w p d @t a = 25c power dissipation (pcb mount)* 1.0 w linear derating factor (pcb mount)* 8.3 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 47 mj i ar avalanche current 1.6 a e ar repetitive avalanche energy * 0.10 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c a
IRFL4310PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.12 ??? v/c reference to 25c, i d = 1ma ??? ??? 0.20 ? v gs = 10v, i d = 1.6a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 1.5 ??? ??? s v ds = 50v, i d = 0.80 a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? 17 25 i d = 1.6a q gs gate-to-source charge ??? 2.1 3.1 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 7.8 12 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 7.8 ??? v dd = 50v t r rise time ??? 18 ??? ns i d = 1.6a t d(off) turn-off delay time ??? 34 ??? r g = 6.2 ? t f fall time ??? 20 ??? r d = 31 ?, see fig. 10 c iss input capacitance ??? 330 ??? v gs = 0v c oss output capacitance ??? 92 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 54 ??? ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) i gss r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 1.6a, di/dt 340a/s, v dd v (br)dss , t j 150c notes: v dd = 25v, starting t j = 25c, l = 9.2 mh r g = 25 ? , i as = 3.2a. (see figure 12) pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 1.6a, v gs = 0v t rr reverse recovery time ??? 72 110 ns t j = 25c, i f = 1.6a q rr reverse recoverycharge ??? 210 320 nc di/dt = 100a/s ??? ??? ??? ??? 13 0.91 a source-drain ratings and characteristics
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IRFL4310PBF 8 www.irf.com sot-223 (to-261aa) package outline dimensions are shown in milimeters (inches) sot-223 (to-261aa) part marking information p = designates lead-free product (optional) a = assembly site code top bottom logo 314p ax xx x part number int ernational rect ifier hexfet product marking f l014 t his is an irfl014 lot code dat e code (yyww) yy = year ww = week
IRFL4310PBF www.irf.com 9 sot-223 (to-261aa) tape & reel information 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min . 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. o ut lin e c o mfo r ms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) m ax. 14.40 (.566) 12.40 (.488) 4 4 data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/04
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